Home / Technology / Toshiba Powers Industrial Gear with New SiC Module
Toshiba Powers Industrial Gear with New SiC Module
24 Sep
Summary
- New dual SiC MOSFET module supports 3300V and 800A ratings.
- Optimized design provides 300 kA²s surge current capability.
- Module offers reduced conduction and switching losses for efficiency.
Toshiba Electronic Devices & Storage Corporation has introduced the IX800FXF2YMS4, a new dual SiC MOSFET module engineered for demanding industrial applications. This module supports a 3300V drain-source voltage and an 800A continuous drain current, crucial for equipment such as railway traction inverters and renewable energy systems.
The IX800FXF2YMS4 is designed to meet the increasing need for higher efficiency and reliability in industrial settings. It offers a robust surge current capability, indicated by an I²t limit value of 300 kA²s in its diode section. This specification is vital for protecting power semiconductor modules during abnormal conditions.
Further enhancing its performance, the module features reduced conduction losses with a V of 1.4V (typ.). Its optimized switching losses, with E on of 185mJ (typ.) and E off of 175mJ (typ.), contribute to improved equipment efficiency and enable smaller cooling systems. The product utilizes the iXPLV™ package and silver sintering bonding for superior heat resistance and reliability, allowing a 175°C channel temperature rating.
This launch expands Toshiba's lineup of SiC MOSFET modules in the iXPLV™ package to four options, providing greater product diversity for various equipment specifications. Toshiba continues its commitment to advancing industrial equipment through more reliable, efficient, and compact solutions.
