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Future RAM: 10x Faster with 70% Less Power
7 Nov
Summary
- New 3D memory stacks DRAM chips vertically for increased speed.
- Through-silicon vias enable 128GBps data transfer speeds.
- This technology promises 70 percent greater power efficiency.
A significant leap in memory technology is on the horizon, thanks to a collaboration between IBM and Micron. They have developed a novel three-dimensional memory architecture that involves vertically stacking individual DRAM chips, a departure from traditional side-by-side placement. This stacked design, coupled with the introduction of through-silicon vias (TSVs), acts as a high-speed conduit between the memory and the host device.
Testing has demonstrated that this new memory can reach data speeds of up to 128GBps, marking a tenfold increase over current memory capabilities. IBM also highlights that this innovative approach leads to a remarkable 70 percent improvement in power efficiency compared to existing DRAM. This groundbreaking research is slated to become a core component of Samsung and Micron's Hybrid Memory Cube technology.
Commercial availability is anticipated within the next two years, with servers being the primary initial adopters. IBM suggests that the underlying principles of this three-dimensional stacking and TSV technology could extend to other industry segments beyond memory, hinting at broader future applications.
