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AI Gobbles Up Next-Gen Samsung Memory
5 Aug
Summary
- Samsung unveiled new zHBM memory stacking HBM directly above AI accelerators.
- New V10 BV-NAND stacks over 400 layers, boosting density by 58 percent.
- AI demand drives up prices for electronics, affecting gaming consoles and phones.
Samsung recently unveiled groundbreaking advancements in memory and storage technologies at the Future of Memory and Storage (FMS) show. These include the new zHBM memory architecture, which stacks HBM directly above AI accelerators for up to eight times greater performance and increased memory density.
Additionally, Samsung introduced V10 BV-NAND, a new V-NAND memory capable of stacking over 400 layers, increasing density by approximately 58 percent and improving performance. The company also showcased zNAND-O for edge AI environments and LPDDR5X-PIM with integrated data processing capabilities.
Despite these innovations, the primary beneficiaries are expected to be AI data centers. This heightened demand from the artificial intelligence sector, which both Samsung and SK Hynix are struggling to meet, is contributing to escalating prices for a wide array of consumer electronics.
