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Samsung Taps TSMC for Nvidia's Next-Gen Memory
18 Oct
Summary
- Samsung will utilize TSMC's 3nm process for Nvidia's chips.
- This marks Samsung's first HBM collaboration with TSMC.
- Nvidia's next-generation custom high-bandwidth memory is involved.
Samsung Electronics will reportedly utilize Taiwan Semiconductor Manufacturing Company's (TSMC) cutting-edge 3-nanometre process. This advanced manufacturing node will be employed to produce the base dies for Nvidia's next-generation custom high-bandwidth memory (HBM) chips. This collaboration represents a notable first for Samsung.
It marks the initial time Samsung Electronics has partnered with TSMC specifically for the manufacturing stage of high-bandwidth memory chips. This strategic move underscores the intense competition and evolving landscape within the global semiconductor industry, particularly in the development of advanced memory solutions for high-performance computing.
