Home / Technology / AI Memory Leap: Intel & SoftBank Forge Z-Angle
AI Memory Leap: Intel & SoftBank Forge Z-Angle
11 Feb
Summary
- New Z-Angle Memory aims for 2-3x capacity of current HBM.
- It targets 40-50% power consumption reduction for AI workloads.
- Prototypes are expected by early 2028 for commercial launch in 2029.
Intel and SoftBank-backed Saimemory are collaborating to develop Z-Angle Memory, a novel stacked DRAM architecture engineered for artificial intelligence and high-performance computing. This advanced design reportedly builds upon Intel's prior research in multi-layer DRAM stacking.
Saimemory aims for Z-Angle Memory to offer two to three times the capacity of existing HBM products while reducing power consumption by approximately 40-50%. Cost competitiveness is a core requirement for this technology, which targets large-scale AI data center deployments.
Prototypes are expected by early 2028, with a commercial launch slated for 2029. This timeline places Z-Angle Memory several product cycles behind established HBM suppliers like Samsung and SK Hynix.
SoftBank is reportedly investing around 3 billion yen ($19 million) in the prototype phase. For Intel, this partnership marks a return to advanced memory development, aligning with its broader semiconductor strategy. The initiative also supports Japan's ambition to bolster its domestic semiconductor capabilities.
